SCTH336K25 Manufacturer, Function, Datasheet

Manufacturer	Part #	Datasheet Date Size	Description	Rohs Pb Free Lifecycle	Direct Link
TE Connectivity	SCT-NO.2-E5-0-50MM		SCT-NO.2-E5-0-50MM	compliant unknown active
TE Connectivity	SCT-NO.4-E2-0-STK		Heat Shrinks	compliant unknown active
STMicroelectronics	SCT-ST54J4FF-QA7		NFC controller and Secure Element single die	contact_manufacturer preview
	SCT-TPM-RAS2XSPI		TPM development kit	contact_manufacturer active
	SCT-TPM-RASPIHC2		TPM development kit	contact_manufacturer active
	SCT-TPM-RASPIHC4		TPM development kit	contact_manufacturer active
	SCT-TPM-RASPIHD5		TPM development kit	contact_manufacturer active
	SCT1000N170		Silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package	contact_manufacturer active
	SCT1000N170AG		Automotive-grade silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package	contact_manufacturer active
	SCT10N120		Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package	contact_manufacturer active
	SCT10N120		Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package	contact_manufacturer active
	SCT10N120AG		Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package	contact_manufacturer active
	SCT10N120H		Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package	contact_manufacturer active
	SCT20N120		Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package	contact_manufacturer active
	SCT20N120		Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package	contact_manufacturer active
	SCT20N120AG		Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package	contact_manufacturer active
	SCT20N120H		Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package	contact_manufacturer active
	SCT20N170		Silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., TJ = 25 C) in an HiP247 package	contact_manufacturer active
	SCT20N170AG		Automotive-grade silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., Tj = 25 C) in an HiP247 package	contact_manufacturer active
	SCT30N120		Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package	contact_manufacturer active

SCTH336K25 Manufacturer

SCTH3 Manufacturer

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